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| Si2312DS Vishay Siliconix N-Channel 20 -V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES ID (A) 4.9 4.4 3.9 11.2 rDS(on) (W) 0.033 @ VGS = 4.5 V 0.040 @ VGS = 2.5 V 0.051 @ VGS = 1.8 V Qg (Typ) D 1.8-V Rated D RoHS Compliant Pb-free Available TO-236 (SOT-23) G 1 3 D S 2 Top View Si2312DS (C2)* *Marking Code Ordering Information: Si2312DS-T1 Si2312DS-T1--E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Avalanche Currentb Single Avalanche Energy Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C L = 0 1 mH 0.1 TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IAS EAS IS PD TJ, Tstg 5 sec 20 "8 4.9 3.9 15 15 Steady State Unit V 3.77 3.0 A 11.25 1.0 1.25 0.80 -55 to 150 0.75 0.48 mJ A W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot Notes a. Surface Mounted on 1" x 1" FR4 Board. b. Pulse width limited by maximum junction temperature Document Number: 71338 S-50574--Rev. E, 04-Apr-05 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 75 120 40 Maximum 100 166 50 Unit _C/W C/W 1 Si2312DS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS w 10 V, VGS = 4.5 V VGS = 4.5 V, ID = 5.0 A Drain-Source On-Resistancea S O Forward Transconductancea Diode Forward Voltage VGS = 2.5 V, ID = 4.5 A VGS = 1.8 V, ID = 4.0 A VDS = 15 V, ID = 5.0 A IS = 1.0 A, VGS = 0 V 15 0.027 0.033 0.042 40 0.8 1.2 0.033 0.040 0.051 S V W 20 0.45 0.65 0.85 "100 1 75 V nA mA A Symbol Test Conditions Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 11.2 1.4 2.2 14.0 nC Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Source-Drain Reverse Recovery Time td(on) tr td(off) tf trr IF = 1.0 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W ID ^ 1.0 A, VGEN = 4.5 V, Rg = 6 W 15 40 48 31 13 25 60 70 45 25 ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 15 VGS = 4.5 thru 2.0 V 12 I D - Drain Current (A) 1.5 V I D - Drain Current (A) 12 15 Transfer Characteristics 9 9 6 6 TC = 125_C 3 25_C 0 0.0 -55_C 1.0 1.5 2.0 3 0.5 V 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 1.0 V 0.5 VGS - Gate-to-Source Voltage (V) Document Number: 71338 S-50574--Rev. E, 04-Apr-05 www.vishay.com 2 Si2312DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.15 On-Resistance vs. Drain Current 1500 Capacitance r DS(on) - On-Resistance ( W ) 0.12 C - Capacitance (pF) 1200 Ciss 0.09 VGS = 1.8 V VGS = 2.5 V 900 0.06 600 0.03 VGS = 4.5 V 300 Coss Crss 0.00 0 3 6 9 12 15 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 8 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 5.0 A rDS(on) - On-Resiistance (Normalized) 6 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.0 A 1.2 4 1.0 2 0.8 0 0 4 8 12 16 20 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 10 r DS(on) - On-Resistance ( W ) 0.20 On-Resistance vs. Gate-to-Source Voltage ID = 5.0 A 0.15 I S - Source Current (A) TJ = 150_C 1 0.10 TJ = 25_C 0.1 0.05 0.01 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71338 S-50574--Rev. E, 04-Apr-05 www.vishay.com 3 Si2312DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.2 0.1 V GS(th) Variance (V) ID = 250 mA Power (W) -0.0 -0.1 -0.2 -0.3 -0.4 -50 8 6 4 2 TA = 25_C 12 10 Single Pulse Power 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 2 1 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71338. www.vishay.com Document Number: 71338 S-50574--Rev. E, 04-Apr-05 4 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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